Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb<sub>2</sub> Te<sub>3</sub> Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices.

Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb₂ Te₃ Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices.

Kowalczyk, Philippe; Hippert, Françoise; Bernier, Nicolas; Mocuta, Cristian; Sabbione, Chiara; Batista-Pessoa, Walter; Noé, Pierre.

Afiliação

Kowalczyk P; Université Grenoble Alpes, CEA, LETI, 17, rue des Martyrs, F 38054, Grenoble Cedex 9, France.
Hippert F; Université Grenoble Alpes, CNRS, LTM, 17, rue des Martyrs, F 38054, Grenoble Cedex 9, France.
Bernier N; LNCMI-EMFL-CNRS, Université Grenoble Alpes, INSA, UPS, 25, rue des Martyrs, F 38042, Grenoble Cedex 9, France.
Mocuta C; Université Grenoble Alpes, CEA, LETI, 17, rue des Martyrs, F 38054, Grenoble Cedex 9, France.
Sabbione C; Synchrotron SOLEIL l'Orme des Merisiers, Saint-Aubin - BP 48, F-91192, Gif-sur-Yvette Cedex, France.
Batista-Pessoa W; Université Grenoble Alpes, CEA, LETI, 17, rue des Martyrs, F 38054, Grenoble Cedex 9, France.
Noé P; Université Grenoble Alpes, CEA, LETI, 17, rue des Martyrs, F 38054, Grenoble Cedex 9, France.

Small ; 14(24): e1704514, 2018 Jun.

Article em En | MEDLINE | ID: mdl-29761644