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Nonlinear optical properties of aluminum nitride nanotubes doped by excess electron: a first principle study.
Yuan, Tang-Mi; Liu, Shao-Li; Liu, Zhen-Bo; Wang, Xiao; Li, Wen-Zuo; Cheng, Jian-Bo; Li, Qing-Zhong.
Afiliação
  • Yuan TM; College of Chemistry and Chemical Engineering, Yantai University, Yantai, 264005, People's Republic of China.
  • Liu SL; College of Chemistry and Chemical Engineering, Yantai University, Yantai, 264005, People's Republic of China.
  • Liu ZB; College of Chemistry and Chemical Engineering, Yantai University, Yantai, 264005, People's Republic of China. zhenboliu@foxmail.com.
  • Wang X; College of Chemistry and Chemical Engineering, Yantai University, Yantai, 264005, People's Republic of China.
  • Li WZ; College of Chemistry and Chemical Engineering, Yantai University, Yantai, 264005, People's Republic of China. liwenzuo2004@126.com.
  • Cheng JB; College of Chemistry and Chemical Engineering, Yantai University, Yantai, 264005, People's Republic of China.
  • Li QZ; College of Chemistry and Chemical Engineering, Yantai University, Yantai, 264005, People's Republic of China.
J Mol Model ; 24(8): 205, 2018 Jul 14.
Article em En | MEDLINE | ID: mdl-30008049
ABSTRACT
Aluminum nitride nanotubes (AlNNTs) doped by the excess electron, e@AlNNT and M@N-AlNNT (M = Li, Na, K), have been designed and their geometrical, electronic, and nonlinear optical (NLO) properties have been explored theoretically. The results showed that the excess electron narrows the energy gap between HOMO and LUMO values (EH-L) of the doped systems in the range of 3.42-5.37 eV, which is due to a new energy level HOMO formed for the doped excess electron, with higher energy than the original HOMO of AlNNT. Importantly, the doped excess electron considerably increases the first hyperpolarizability (ß0) from 130 a.u. of the undoped AlNNT to 646 a.u. for e@AlNNT, 2606 a.u. for Li@N-AlNNT, while 1.14 × 105 a.u. for Na@N-AlNNT, and 1.37 × 106 a.u. for K@N-AlNNT. The enormous ß0 values for Na@N-AlNNT and K@N-AlNNT are attributed to the low transition energy. These results demonstrate that AlNNTs are a promising material in high-performance NLO nanomaterials for electronic devices.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article