Your browser doesn't support javascript.
loading
Topological Transitions Induced by Antiferromagnetism in a Thin-Film Topological Insulator.
He, Qing Lin; Yin, Gen; Yu, Luyan; Grutter, Alexander J; Pan, Lei; Chen, Chui-Zhen; Che, Xiaoyu; Yu, Guoqiang; Zhang, Bin; Shao, Qiming; Stern, Alexander L; Casas, Brian; Xia, Jing; Han, Xiaodong; Kirby, Brian J; Lake, Roger K; Law, K T; Wang, Kang L.
Afiliação
  • He QL; Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
  • Yin G; International Center for Quantum Materials, Peking University, Beijing 100871, China.
  • Yu L; Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
  • Grutter AJ; Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
  • Pan L; NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6102, USA.
  • Chen CZ; Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
  • Che X; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Yu G; Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
  • Zhang B; Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
  • Shao Q; Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, 100124, Beijing, China.
  • Stern AL; Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.
  • Casas B; Department of Physics and Astronomy, University of California, Irvine, California 92697, USA.
  • Xia J; Department of Physics and Astronomy, University of California, Irvine, California 92697, USA.
  • Han X; Department of Physics and Astronomy, University of California, Irvine, California 92697, USA.
  • Kirby BJ; Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, 100124, Beijing, China.
  • Lake RK; NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-6102, USA.
  • Law KT; Laboratory for Terascale and Terahertz Electronics (LATTE), Department of Electrical and Computer Engineering, University of California, Riverside, Riverside, California 92521, USA.
  • Wang KL; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
Phys Rev Lett ; 121(9): 096802, 2018 Aug 31.
Article em En | MEDLINE | ID: mdl-30230908
Magnetism in topological insulators (TIs) opens a topologically nontrivial exchange band gap, providing an exciting platform for manipulating the topological order through an external magnetic field. Here, we show that the surface of an antiferromagnetic thin film can magnetize the top and the bottom TI surface states through interfacial couplings. During the magnetization reversal, intermediate spin configurations are ascribed from unsynchronized magnetic switchings. This unsynchronized switching develops antisymmetric magnetoresistance spikes during magnetization reversals, which might originate from a series of topological transitions. With the high Néel ordering temperature provided by the antiferromagnetic layers, the signature of the induced topological transition persists up to ∼90 K.
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2018 Tipo de documento: Article