Your browser doesn't support javascript.
loading
Engineering Efficient Photon Upconversion in Semiconductor Heterostructures.
Milleville, Christopher C; Chen, Eric Y; Lennon, Kyle R; Cleveland, Jill M; Kumar, Abinash; Zhang, Jing; Bork, James A; Tessier, Ansel; LeBeau, James M; Chase, D Bruce; Zide, Joshua M O; Doty, Matthew F.
Afiliação
  • Kumar A; Department of Materials Science and Engineering , North Carolina State University , Raleigh , North Carolina 27606 , United States.
  • Tessier A; The Tatnall School , Wilmington , Delaware 19807 , United States.
  • LeBeau JM; Department of Materials Science and Engineering , North Carolina State University , Raleigh , North Carolina 27606 , United States.
ACS Nano ; 13(1): 489-497, 2019 Jan 22.
Article em En | MEDLINE | ID: mdl-30576110
Photon upconversion is a photophysical process in which two low-energy photons are converted into one high-energy photon. Photon upconversion has broad appeal for a range of applications from biomedical imaging and targeted drug release to solar energy harvesting. Current upconversion nanosystems, including lanthanide-doped nanocrystals and triplet-triplet annihilation molecules, have achieved upconversion quantum yields on the order of 10-30%. However, the performance of these materials is hampered by inherently narrow absorption cross sections and fixed energy levels originating in atomic, ionic, or molecular states. Semiconductors, on the other hand, have inherently wide absorption cross sections. Moreover, recent advances enable the synthesis of colloidal semiconductor nanoparticles with complex heterostructures that can control band alignments and tune optical properties. We synthesize and characterize a three-component heterostructure that successfully upconverts photons under continuous-wave illumination and solar-relevant photon fluxes. The heterostructure is composed of two cadmium selenide quantum dots (QDs), an absorber and emitter, spatially separated by a cadmium sulfide nanorod (NR). We demonstrate that the principles of semiconductor heterostructure engineering can be applied to engineer improved upconversion efficiency. We first eliminate electron trap states near the surface of the absorbing QD and then tailor the band gap of the NR such that charge carriers are funneled to the emitting QD. When combined, these two changes result in a 100-fold improvement in photon upconversion performance.
Palavras-chave

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article