Hybrid Anodic and Metal-Assisted Chemical Etching Method Enabling Fabrication of Silicon Carbide Nanowires.

Chen, Yun; Zhang, Cheng; Li, Liyi; Zhou, Shuang; Chen, Xin; Gao, Jian; Zhao, Ni; Wong, Ching-Ping.

Afiliação

Chen Y; State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangdong University of Technology, Guangzhou, 510006, China.
Zhang C; School of Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong.
Li L; School of Materials Science and Engineering, Georgia Institute of Technology, 711 Ferst Drive, Atlanta, GA, 30332, USA.
Zhou S; School of Materials Science and Engineering, Georgia Institute of Technology, 711 Ferst Drive, Atlanta, GA, 30332, USA.
Chen X; School of Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong.
Gao J; State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangdong University of Technology, Guangzhou, 510006, China.
Zhao N; State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangdong University of Technology, Guangzhou, 510006, China.
Wong CP; School of Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong.

Small ; 15(7): e1803898, 2019 Feb.

Article em En | MEDLINE | ID: mdl-30667586

Palavras-chave

hybrid anodic and metal-assisted chemical etching method; silicon carbide (SiC) nanowires; silicon carbide (SiC) wet etching; third-generation semiconductor material

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article