Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics.

Yoshino, Michitaka; Ando, Yuto; Deki, Manato; Toyabe, Toru; Kuriyama, Kazuo; Honda, Yoshio; Nishimura, Tomoaki; Amano, Hiroshi; Kachi, Tetsu; Nakamura, Tohru

Yoshino, Michitaka; Ando, Yuto; Deki, Manato; Toyabe, Toru; Kuriyama, Kazuo; Honda, Yoshio; Nishimura, Tomoaki; Amano, Hiroshi; Kachi, Tetsu; Nakamura, Tohru.

Afiliação

Yoshino M; Research Center of Ion Beam Technology, Hosei University, Tokyo 184-8584, Japan. michitaka.yoshino.86@hosei.ac.jp.
Ando Y; Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8601, Japan. yuuto_a@nuee.nagoya-u.ac.jp.
Deki M; Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya 464-8603, Japan. deki@nuee.nagoya-u.ac.jp.
Toyabe T; Toyo University, Kawagoe 350-8585, Japan. tttoyabe@gmail.com.
Kuriyama K; Research Center of Ion Beam Technology, Hosei University, Tokyo 184-8584, Japan. kuri@hosei.ac.jp.
Honda Y; Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya 464-8603, Japan. honda@nagoya-u.jp.
Nishimura T; Research Center of Ion Beam Technology, Hosei University, Tokyo 184-8584, Japan. t-nishi@hosei.ac.jp.
Amano H; Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8601, Japan. amano@nuee.nagoya-u.ac.jp.
Kachi T; Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya 464-8603, Japan. amano@nuee.nagoya-u.ac.jp.
Nakamura T; Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya 464-8603, Japan. kachi@imass.nagoya-u.ac.jp.