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Ferromagnetic van der Waals Crystal VI3.
Tian, Shangjie; Zhang, Jian-Feng; Li, Chenghe; Ying, Tianping; Li, Shiyan; Zhang, Xiao; Liu, Kai; Lei, Hechang.
Afiliação
  • Tian S; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices , Renmin University of China , Beijing 100872 , P. R. China.
  • Zhang JF; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices , Renmin University of China , Beijing 100872 , P. R. China.
  • Li C; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices , Renmin University of China , Beijing 100872 , P. R. China.
  • Ying T; State Key Laboratory of Surface Physics, Department of Physics, and Laboratory of Advanced Materials , Fudan University , Shanghai 200438 , P. R. China.
  • Li S; State Key Laboratory of Surface Physics, Department of Physics, and Laboratory of Advanced Materials , Fudan University , Shanghai 200438 , P. R. China.
  • Zhang X; Collaborative Innovation Center of Advanced Microstructures , Nanjing 210093 , P. R. China.
  • Liu K; State Key Laboratory of Information Photonics and Optical Communications & School of Science , Beijing University of Posts and Telecommunications , Beijing 100876 , P. R. China.
  • Lei H; Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices , Renmin University of China , Beijing 100872 , P. R. China.
J Am Chem Soc ; 141(13): 5326-5333, 2019 Apr 03.
Article em En | MEDLINE | ID: mdl-30856325
We report structural properties, physical properties, and the electronic structure of van der Waals (vdW) crystal VI3. Detailed analysis reveals that VI3 exhibits a structural transition from monoclinic C2/ m to rhombohedral R3̅ at Ts ≈ 79 K, similar to CrX3 (X = Cl, Br, I). Below Ts, a long-range ferromagnetic (FM) transition emerges at Tc ≈ 50 K. The local moment of V in VI3 is close to the high-spin state V3+ ion ( S = 1). Theoretical calculations suggest that VI3 may be a Mott insulator with a band gap of about 0.90 eV. In addition, VI3 has a relatively small interlayer binding energy and can be exfoliated easily down to a few layers experimentally. Therefore, VI3 is a candidate for two-dimensional FM semiconductors. It also provides a novel platform to explore 2D magnetism and vdW heterostructures in S = 1 system.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article