Simultaneous growth of Ga2S3 and GaS thin films using physical vapor deposition with GaS powder as a single precursor.
Nanotechnology
; 30(38): 384001, 2019 Sep 20.
Article
em En
| MEDLINE
| ID: mdl-31181554
ABSTRACT
High quality gallium sulfide II (GaS) and gallium sulfide III ([Formula see text]) thin films on [Formula see text]/Si substrates were simultaneously grown by using physical vapor deposition with GaS powder as a single precursor. By controlling the substrate temperature, we can selectively grow either GaS or Ga2S3 thin films on SiO2/Si substrates. Relatively high and low substrate temperature conditions resulted in Ga2S3 and GaS thin films, respectively. The synthesized thin films were characterized by x-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy analyses.
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MEDLINE
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En
Ano de publicação:
2019
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Article