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Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices.
Shi, Ya-Ting; Ren, Fang-Fang; Xu, Wei-Zong; Chen, Xuanhu; Ye, Jiandong; Li, Li; Zhou, Dong; Zhang, Rong; Zheng, Youdou; Tan, Hark Hoe; Jagadish, Chennupati; Lu, Hai.
Afiliação
  • Shi YT; School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
  • Ren FF; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Xu WZ; School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China. ffren@nju.edu.cn.
  • Chen X; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China. ffren@nju.edu.cn.
  • Ye J; School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
  • Li L; School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
  • Zhou D; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
  • Zhang R; School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
  • Zheng Y; Australian National Fabrication Facility, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia.
  • Tan HH; School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
  • Jagadish C; School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
  • Lu H; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
Sci Rep ; 9(1): 8796, 2019 Jun 19.
Article em En | MEDLINE | ID: mdl-31217468
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article