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Perovskite Bifunctional Device with Improved Electroluminescent and Photovoltaic Performance through Interfacial Energy-Band Engineering.
Xie, Jiangsheng; Hang, Pengjie; Wang, Han; Zhao, Shenghe; Li, Ge; Fang, Yanjun; Liu, Feng; Guo, Xinlu; Zhu, Hepeng; Lu, Xinhui; Yu, Xuegong; Chan, Christopher C S; Wong, Kam Sing; Yang, Deren; Xu, Jianbin; Yan, Keyou.
Afiliação
  • Xie J; Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, 999077, P. R. China.
  • Hang P; School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, National Engineering Laboratory for VOCs Pollution Control Technology and Equipment, South China University of Technology, Guangzhou, 510006, P. R. China.
  • Wang H; State Key Laboratory of Silicon Materials and School of Materials Science & Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
  • Zhao S; Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, 999077, P. R. China.
  • Li G; Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, 999077, P. R. China.
  • Fang Y; State Key Laboratory of Silicon Materials and School of Materials Science & Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
  • Liu F; State Key Laboratory of Silicon Materials and School of Materials Science & Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
  • Guo X; Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, 999077, P. R. China.
  • Zhu H; Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, 999077, P. R. China.
  • Lu X; School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, National Engineering Laboratory for VOCs Pollution Control Technology and Equipment, South China University of Technology, Guangzhou, 510006, P. R. China.
  • Yu X; Department of Physics, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, P. R. China.
  • Chan CCS; State Key Laboratory of Silicon Materials and School of Materials Science & Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
  • Wong KS; Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P. R. China.
  • Yang D; Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P. R. China.
  • Xu J; State Key Laboratory of Silicon Materials and School of Materials Science & Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
  • Yan K; Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, 999077, P. R. China.
Adv Mater ; 31(33): e1902543, 2019 Aug.
Article em En | MEDLINE | ID: mdl-31231879
ABSTRACT
Currently, photovoltaic/electroluminescent (PV/EL) perovskite bifunctional devices (PBDs) exhibit poor performance due to defects and interfacial misalignment of the energy band. Interfacial energy-band engineering between the perovskite and hole-transport layer (HTL) is introduced to reduce energy loss, through adding corrosion-free 3,3'-(2,7-dibromo-9H-fluorene-9,9-diyl) bis(n,n-dimethylpropan-1-amine) (FN-Br) into a HTL free of lithium salt. This strategy can turn the n-type surface of perovskite into p-type and thus correct the misalignment to form a well-defined N-I-P heterojunction. The tailored PBD achieves a high PV efficiency of up to 21.54% (certified 20.24%) and 4.3% EL external quantum efficiency. Free of destructive additives, the unencapsulated devices maintain >92% of their initial PV performance for 500 h at maximum power point under standard air mass 1.5G illumination. This strategy can serve as a general guideline to enhance PV and EL performance of perovskite devices while ensuring excellent stability.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article
Texto completo
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article