Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer.

Zhu, Shunwei; Jia, Hujun; Li, Tao; Tong, Yibo; Liang, Yuan; Wang, Xingyu; Zeng, Tonghui; Yang, Yintang.

Afiliação

Zhu S; School of Microelectronics, Xidian University, Xi'an 710071, China.
Jia H; School of Microelectronics, Xidian University, Xi'an 710071, China. hjjia@mail.xidian.edu.cn.
Li T; School of Microelectronics, Xidian University, Xi'an 710071, China.
Tong Y; School of Microelectronics, Xidian University, Xi'an 710071, China.
Liang Y; School of Microelectronics, Xidian University, Xi'an 710071, China.
Wang X; School of Microelectronics, Xidian University, Xi'an 710071, China.
Zeng T; School of Microelectronics, Xidian University, Xi'an 710071, China.
Yang Y; School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines (Basel) ; 10(7)2019 Jul 02.

Article em En | MEDLINE | ID: mdl-31269635