Role of Surface Reduction in the Formation of Traps in <i>n</i>-Doped II-VI Semiconductor Nanocrystals: How to Charge without Reducing the Surface.

Role of Surface Reduction in the Formation of Traps in n-Doped II-VI Semiconductor Nanocrystals: How to Charge without Reducing the Surface.

du Fossé, Indy; Ten Brinck, Stephanie; Infante, Ivan; Houtepen, Arjan J.

Afiliação

du Fossé I; Optoelectronic Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands.
Ten Brinck S; Department of Theoretical Chemistry, Faculty of Science, Vrije Universiteit Amsterdam, de Boelelaan 1083, 1081 HV Amsterdam, The Netherlands.
Infante I; Department of Theoretical Chemistry, Faculty of Science, Vrije Universiteit Amsterdam, de Boelelaan 1083, 1081 HV Amsterdam, The Netherlands.
Houtepen AJ; Department of Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy.

Chem Mater ; 31(12): 4575-4583, 2019 Jun 25.

Article em En | MEDLINE | ID: mdl-31274957

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article