Immunity to Contact Scaling in MoS<sub>2</sub> Transistors Using in Situ Edge Contacts.

Immunity to Contact Scaling in MoS₂ Transistors Using in Situ Edge Contacts.

Cheng, Zhihui; Yu, Yifei; Singh, Shreya; Price, Katherine; Noyce, Steven G; Lin, Yuh-Chen; Cao, Linyou; Franklin, Aaron D.

Afiliação

Cheng Z; Department of Electrical and Computer Engineering , Duke University , Durham , North Carolina 27708 , United States.
Yu Y; Department of Materials Science and Engineering , North Carolina State University , Raleigh , North Carolina 27695 , United States.
Singh S; Department of Electrical and Computer Engineering , Duke University , Durham , North Carolina 27708 , United States.
Price K; Department of Electrical and Computer Engineering , Duke University , Durham , North Carolina 27708 , United States.
Noyce SG; Department of Electrical and Computer Engineering , Duke University , Durham , North Carolina 27708 , United States.
Lin YC; Department of Electrical and Computer Engineering , Duke University , Durham , North Carolina 27708 , United States.
Cao L; Department of Materials Science and Engineering , North Carolina State University , Raleigh , North Carolina 27695 , United States.
Franklin AD; Department of Electrical and Computer Engineering , Duke University , Durham , North Carolina 27708 , United States.

Nano Lett ; 19(8): 5077-5085, 2019 Aug 14.

Article em En | MEDLINE | ID: mdl-31283241