Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO<sub>2-x</sub> Memristive Devices.

Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO_2-x Memristive Devices.

Nagata, Zenya; Shimizu, Takuma; Isaka, Tsuyoshi; Tohei, Tetsuya; Ikarashi, Nobuyuki; Sakai, Akira.

Afiliação

Nagata Z; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531, Japan.
Shimizu T; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531, Japan.
Isaka T; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531, Japan.
Tohei T; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531, Japan. tohei@ee.es.osaka-u.ac.jp.
Ikarashi N; Institute of Materials and System for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan.
Sakai A; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka, 560-8531, Japan. sakai@ee.es.osaka-u.ac.jp.

Sci Rep ; 9(1): 10013, 2019 07 10.

Article em En | MEDLINE | ID: mdl-31292485

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article