Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor.

Lee, Hyeon-Jun; Abe, Katsumi; Noh, Hee Yeon; Kim, June-Seo; Lee, Hyunki; Lee, Myoung-Jae.

Afiliação

Lee HJ; Intelligent Devices & Systems Research Group, Institute of Convergence, DGIST, Daegu, 42988, Korea. dear.hjlee@dgist.ac.kr.
Abe K; Silvaco Japan Co. Ltd., Nakagyo-ku, Kyoto, 604-8152, Japan.
Noh HY; Intelligent Devices & Systems Research Group, Institute of Convergence, DGIST, Daegu, 42988, Korea.
Kim JS; Intelligent Devices & Systems Research Group, Institute of Convergence, DGIST, Daegu, 42988, Korea.
Lee H; Convergence Research Center for Collaborative Robots, Institute of Convergence, DGIST, Daegu, 42988, Korea.
Lee MJ; Intelligent Devices & Systems Research Group, Institute of Convergence, DGIST, Daegu, 42988, Korea.

Sci Rep ; 9(1): 11977, 2019 Aug 19.

Article em En | MEDLINE | ID: mdl-31427668

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article