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Thermal decomposition of GaAs nanowires.
Ilkiv, Igor; Kirilenko, Demid; Kotlyar, Konstantin; Bouravleuv, Alexey.
Afiliação
  • Ilkiv I; St. Petersburg Academic University, St. Petersburg 194021, Russia. St. Petersburg State University, St. Petersburg 199034, Russia.
Nanotechnology ; 31(5): 055701, 2020 Jan 24.
Article em En | MEDLINE | ID: mdl-31618715
The realization of GaAs nanowire (NW) high-performance quantum devices operated at room temperatures requires that their diameters have to be less than 10 nm. It is shown, that the GaAs NWs with sub 10 nanometers diameters can be fabricated using the thermal decomposition technique. It is demonstrated, that depending on annealing conditions, the NW lengths, as well as shapes, can be modified significantly. The GaAs NWs with bottle-like and diameter-modulated shapes can be obtained. At the first stage of the thermal annealing in the presence of As flux, an increase in NW length was found.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article