Investigation of Band Alignment for Hybrid 2D-MoS2/3D-ß-Ga2O3 Heterojunctions with Nitridation.

Huan, Ya-Wei; Xu, Ke; Liu, Wen-Jun; Zhang, Hao; Golosov, Dmitriy Anatolyevich; Xia, Chang-Tai; Yu, Hong-Yu; Wu, Xiao-Han; Sun, Qing-Qing; Ding, Shi-Jin

Investigation of Band Alignment for Hybrid 2D-MoS₂/3D-ß-Ga₂O₃ Heterojunctions with Nitridation.

Huan, Ya-Wei; Xu, Ke; Liu, Wen-Jun; Zhang, Hao; Golosov, Dmitriy Anatolyevich; Xia, Chang-Tai; Yu, Hong-Yu; Wu, Xiao-Han; Sun, Qing-Qing; Ding, Shi-Jin.

Afiliação

Huan YW; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Xu K; Key Laboratory of Micro and Nano Photonic Structures, Department of Optical Science and Engineering, Fudan University, Shanghai, 200433, China.
Liu WJ; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China. wjliu@fudan.edu.cn.
Zhang H; Key Laboratory of Micro and Nano Photonic Structures, Department of Optical Science and Engineering, Fudan University, Shanghai, 200433, China.
Golosov DA; Belarusian State University of Informatics and Radioelectronics, P. Brovka street, 6, 220013, Minsk, Belarus.
Xia CT; Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China.
Yu HY; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
Wu XH; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Sun QQ; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Ding SJ; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.