Improved DRUS 4H-SiC MESFET with High Power Added Efficiency. | Micromachines (Basel);11(1)2019 Dec 27. | MEDLINE

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Improved DRUS 4H-SiC MESFET with High Power Added Efficiency.

Jia, Hujun; Liang, Yuan; Li, Tao; Tong, Yibo; Zhu, Shunwei; Wang, Xingyu; Zeng, Tonghui; Yang, Yintang.

Afiliação

Jia H; School of Microelectronics, Xidian University, Xi'an 710071, China.
Liang Y; School of Microelectronics, Xidian University, Xi'an 710071, China.
Li T; School of Microelectronics, Xidian University, Xi'an 710071, China.
Tong Y; School of Microelectronics, Xidian University, Xi'an 710071, China.
Zhu S; School of Microelectronics, Xidian University, Xi'an 710071, China.
Wang X; School of Microelectronics, Xidian University, Xi'an 710071, China.
Zeng T; School of Microelectronics, Xidian University, Xi'an 710071, China.
Yang Y; School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines (Basel) ; 11(1)2019 Dec 27.

Article em En | MEDLINE | ID: mdl-31892117

Palavras-chave

4H-SiC MESFET; power added efficiency (PAE); simulation

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article