Arbitrary control of the diffusion potential between a plasmonic metal and a semiconductor by an angstrom-thick interface dipole layer.

Oshikiri, Tomoya; Sawayanagi, Hiroki; Nakamura, Keisuke; Ueno, Kosei; Katase, Takayoshi; Ohta, Hiromichi; Misawa, Hiroaki.

Afiliação

Oshikiri T; Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0026, Japan.
Sawayanagi H; Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0026, Japan.
Nakamura K; Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0026, Japan.
Ueno K; Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0026, Japan.
Katase T; Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0026, Japan.
Ohta H; Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0026, Japan.
Misawa H; Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0026, Japan.

J Chem Phys ; 152(3): 034705, 2020 Jan 21.

Article em En | MEDLINE | ID: mdl-31968952

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article