Role of surface passivation in integrated sub-bandgap silicon photodetection.
Opt Lett
; 45(7): 2128-2131, 2020 Apr 01.
Article
em En
| MEDLINE
| ID: mdl-32236086
ABSTRACT
We study experimentally the effect of oxide removal on the sub-bandgap photodetection in silicon waveguides at the telecom wavelength regime. Depassivating the device allows for the enhancement of the quantum efficiency by about 2-3 times. Furthermore, the propagation loss within the device is significantly reduced by the oxide removal. Measuring the device 60 days after the depassivation shows slight differences. We provide a possible explanation for these observations. Clearly, passivation and depassivation play an essential role in the design and the implementation of such sub-bandgap photodetector devices for applications such as on-chip light monitoring.
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MEDLINE
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En
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2020
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Article