Defect Dynamic Model of the Synergistic Effect in Neutron- and Î³-Ray-Irradiated Silicon NPN Transistors.

Song, Yu; Zhou, Hang; Cai, Xue-Fen; Liu, Yang; Yang, Ping; Zhang, Guang-Hui; Zhang, Ying; Lan, Mu; Wei, Su-Huai

Song, Yu; Zhou, Hang; Cai, Xue-Fen; Liu, Yang; Yang, Ping; Zhang, Guang-Hui; Zhang, Ying; Lan, Mu; Wei, Su-Huai.

Afiliação

Song Y; Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China.
Zhou H; Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China.
Cai XF; Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China.
Liu Y; Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China.
Yang P; Beijing Computational Science Research Center, Beijing 100193, China.
Zhang GH; Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China.
Zhang Y; Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China.
Lan M; Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China.
Wei SH; Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China.

ACS Appl Mater Interfaces ; 12(26): 29993-29998, 2020 Jul 01.

Article em En | MEDLINE | ID: mdl-32498510

Palavras-chave

Coulomb interaction; NPN transistors; base current; defect diffusion; defect modification; divacancy; p-type silicon; radiation defect dynamics; synergistic effect

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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2020 Tipo de documento: Article

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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2020 Tipo de documento: Article