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Optimization of spin Hall magnetoresistance in heavy-metal/ferromagnetic-metal bilayers.
Karwacki, Lukasz; Grochot, Krzysztof; Lazarski, Stanislaw; Skowronski, Witold; Kanak, Jaroslaw; Powroznik, Wieslaw; Barnas, Józef; Stobiecki, Feliks; Stobiecki, Tomasz.
Afiliação
  • Karwacki L; Institute of Molecular Physics, Polish Academy of Sciences, ul. M. Smoluchowskiego 17, 60-179, Poznan, Poland. karwacki@ifmpan.poznan.pl.
  • Grochot K; Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059, Kraków, Poland. karwacki@ifmpan.poznan.pl.
  • Lazarski S; Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059, Kraków, Poland. grochot@agh.edu.pl.
  • Skowronski W; Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059, Kraków, Poland. grochot@agh.edu.pl.
  • Kanak J; Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059, Kraków, Poland.
  • Powroznik W; Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059, Kraków, Poland.
  • Barnas J; Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059, Kraków, Poland.
  • Stobiecki F; Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059, Kraków, Poland.
  • Stobiecki T; Institute of Molecular Physics, Polish Academy of Sciences, ul. M. Smoluchowskiego 17, 60-179, Poznan, Poland.
Sci Rep ; 10(1): 10767, 2020 Jul 01.
Article em En | MEDLINE | ID: mdl-32612163
ABSTRACT
We present experimental data and their theoretical description on spin Hall magnetoresistance (SMR) in bilayers consisting of a heavy metal (H) coupled to in-plane magnetized ferromagnetic metal (F), and determine contributions to the magnetoresistance due to SMR and anisotropic magnetoresistance (AMR) in five different bilayer systems [Formula see text], [Formula see text], [Formula see text], W/Co, and Co/Pt. The devices used for experiments have different interfacial properties due to either amorphous or crystalline structures of constitutent layers. To determine magnetoresistance contributions and to allow for optimization, the AMR is explicitly included in the diffusion transport equations in the ferromagnets. The results allow determination of different contributions to the magnetoresistance, which can play an important role in optimizing prospective magnetic stray field sensors. They also may be useful in the determination of spin transport properties of metallic magnetic heterostructures in other experiments based on magnetoresistance measurements.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article