Influence of Quenching on the Opto-Electronic Properties of F:SnO<sub>2</sub> Layers.

Influence of Quenching on the Opto-Electronic Properties of F:SnO₂ Layers.

Manceriu, Laura Maria; Maho, Anthony; Labrugere, Christine; Tixhon, Eric; Schrijnemakers, Audrey; Rougier, Aline; Colson, Pierre; Cloots, Rudi.

Afiliação

Manceriu LM; UR CESAM, GREEnMat, University of Liège, Allée du Six Août 13, B-4000 Liège, Belgium.
Maho A; UR CESAM, GREEnMat, University of Liège, Allée du Six Août 13, B-4000 Liège, Belgium.
Labrugere C; CNRS, Université de Bordeaux, PLACAMAT UMS 3626, F-33600 Pessac, France.
Tixhon E; AGC Glass Europe S.A, Technovation Centre, Rue Ernest-Oscar Tips, B-6041 Gosselies, Belgium.
Schrijnemakers A; UR CESAM, GREEnMat, University of Liège, Allée du Six Août 13, B-4000 Liège, Belgium.
Rougier A; CNRS, Université de Bordeaux, Bordeaux INP, ICMCB, UMR 5026, F-33600 Pessac, France.
Colson P; UR CESAM, GREEnMat, University of Liège, Allée du Six Août 13, B-4000 Liège, Belgium.
Cloots R; UR CESAM, GREEnMat, University of Liège, Allée du Six Août 13, B-4000 Liège, Belgium.

ACS Omega ; 5(25): 14999-15006, 2020 Jun 30.

Article em En | MEDLINE | ID: mdl-32637773

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article