Your browser doesn't support javascript.
loading
Roadmap on emerging hardware and technology for machine learning.
Berggren, Karl; Xia, Qiangfei; Likharev, Konstantin K; Strukov, Dmitri B; Jiang, Hao; Mikolajick, Thomas; Querlioz, Damien; Salinga, Martin; Erickson, John R; Pi, Shuang; Xiong, Feng; Lin, Peng; Li, Can; Chen, Yu; Xiong, Shisheng; Hoskins, Brian D; Daniels, Matthew W; Madhavan, Advait; Liddle, James A; McClelland, Jabez J; Yang, Yuchao; Rupp, Jennifer; Nonnenmann, Stephen S; Cheng, Kwang-Ting; Gong, Nanbo; Lastras-Montaño, Miguel Angel; Talin, A Alec; Salleo, Alberto; Shastri, Bhavin J; de Lima, Thomas Ferreira; Prucnal, Paul; Tait, Alexander N; Shen, Yichen; Meng, Huaiyu; Roques-Carmes, Charles; Cheng, Zengguang; Bhaskaran, Harish; Jariwala, Deep; Wang, Han; Shainline, Jeffrey M; Segall, Kenneth; Yang, J Joshua; Roy, Kaushik; Datta, Suman; Raychowdhury, Arijit.
Afiliação
  • Berggren K; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America.
  • Xia Q; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, United States of America.
  • Likharev KK; Stony Brook University, Stony Brook, NY 11794, Unites States.
  • Strukov DB; Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA 93106, United States of America.
  • Jiang H; School of Engineering & Applied Science Yale University, CT, United States of America.
  • Mikolajick T; NaMLab gGmbH and TU Dresden, Germany.
  • Querlioz D; Université Paris-Saclay, CNRS, France.
  • Salinga M; Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, Germany.
  • Erickson JR; Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15261, United States of America.
  • Pi S; Lam Research, Fremont, CA, United States of America.
  • Xiong F; Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15261, United States of America.
  • Lin P; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America.
  • Li C; Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, China.
  • Chen Y; School of information science and technology, Fudan University, Shanghai, People's Republic of China.
  • Xiong S; School of information science and technology, Fudan University, Shanghai, People's Republic of China.
  • Hoskins BD; Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America.
  • Daniels MW; Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America.
  • Madhavan A; Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America.
  • Liddle JA; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, United States of America.
  • McClelland JJ; Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America.
  • Yang Y; Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America.
  • Rupp J; School of Electronics Engineering and Computer Science, Peking University, Beijing, People's Republic of China.
  • Nonnenmann SS; Department of Materials Science and Engineering and Department of Electrical Engineering & Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America.
  • Cheng KT; Electrochemical Materials, ETHZ Department of Materials, Hönggerbergring 64, Zürich 8093, Switzerland.
  • Gong N; Department of Mechanical & Industrial Engineering, University of Massachusetts-Amherst, MA, United States of America.
  • Lastras-Montaño MA; School of Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China.
  • Talin AA; IBM T J Watson Research Center, Yorktown Heights, NY 10598, United States of America.
  • Salleo A; Instituto de Investigación en Comunicación Óptica, Facultad de Ciencias, Universidad Autónoma de San Luis Potosí, México.
  • Shastri BJ; Sandia National Laboratories, Livermore, CA 94551, United States of America.
  • de Lima TF; Department of Materials Science and Engineering, Stanford University, Stanford, California, United States of America.
  • Prucnal P; Department of Physics, Engineering Physics & Astronomy, Queen's University, Kingston ON KL7 3N6, Canada.
  • Tait AN; Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America.
  • Shen Y; Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America.
  • Meng H; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Boulder, CO 80305, United States of America.
  • Roques-Carmes C; Lightelligence, 268 Summer Street, Boston, MA 02210, United States of America.
  • Cheng Z; Lightelligence, 268 Summer Street, Boston, MA 02210, United States of America.
  • Bhaskaran H; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America.
  • Jariwala D; Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom.
  • Wang H; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
  • Shainline JM; Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom.
  • Segall K; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia PA 19104, United States of America.
  • Yang JJ; University of Southern California, Los Angeles, CA 90089, United States of America.
  • Roy K; Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Boulder, CO 80305, United States of America.
  • Datta S; Department of Physics and Astronomy, Colgate University, NY 13346, United States of America.
  • Raychowdhury A; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, United States of America.
Nanotechnology ; 32(1): 012002, 2021 Jan 01.
Article em En | MEDLINE | ID: mdl-32679577
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article