Capping Layers to Improve the Electrical Stress Stability of MoS<sub>2</sub> Transistors.

Capping Layers to Improve the Electrical Stress Stability of MoS₂ Transistors.

Doherty, James L; Noyce, Steven G; Cheng, Zhihui; Abuzaid, Hattan; Franklin, Aaron D.

Afiliação

Doherty JL; Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, United States.
Noyce SG; Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, United States.
Cheng Z; Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, United States.
Abuzaid H; Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, United States.
Franklin AD; Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, United States.

ACS Appl Mater Interfaces ; 12(31): 35698-35706, 2020 Aug 05.

Article em En | MEDLINE | ID: mdl-32805797