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Experimental and Theoretical Study into Interface Structure and Band Alignment of the Cu2Zn1-x Cd x SnS4 Heterointerface for Photovoltaic Applications.
Rondiya, Sachin R; Jadhav, Yogesh; Dzade, Nelson Y; Ahammed, Raihan; Goswami, Tanmay; De Sarkar, Abir; Jadkar, Sandesh; Haram, Santosh; Ghosh, Hirendra N.
Afiliação
  • Rondiya SR; Institute of Nano Science and Technology, Mohali, Punjab 160062, India.
  • Jadhav Y; Department of Chemistry, Savitribai Phule Pune University, Pune 411007, India.
  • Dzade NY; School of Chemistry, Cardiff University, Cardiff, CF10 3AT, Wales United Kingdom.
  • Ahammed R; Institute of Nano Science and Technology, Mohali, Punjab 160062, India.
  • Goswami T; Institute of Nano Science and Technology, Mohali, Punjab 160062, India.
  • De Sarkar A; Institute of Nano Science and Technology, Mohali, Punjab 160062, India.
  • Jadkar S; Department of Physics, Savitribai Phule Pune University, Pune 411007, India.
  • Haram S; Department of Chemistry, Savitribai Phule Pune University, Pune 411007, India.
  • Ghosh HN; Institute of Nano Science and Technology, Mohali, Punjab 160062, India.
ACS Appl Energy Mater ; 3(6): 5153-5162, 2020 Jun 22.
Article em En | MEDLINE | ID: mdl-32905359
To improve the constraints of kesterite Cu2ZnSnS4 (CZTS) solar cell, such as undesirable band alignment at p-n interfaces, bandgap tuning, and fast carrier recombination, cadmium (Cd) is introduced into CZTS nanocrystals forming Cu2Zn1-x Cd x SnS4 through cost-effective solution-based method without postannealing or sulfurization treatments. A synergetic experimental-theoretical approach was employed to characterize and assess the optoelectronic properties of Cu2Zn1-x Cd x SnS4 materials. Tunable direct band gap energy ranging from 1.51 to 1.03 eV with high absorption coefficient was demonstrated for the Cu2Zn1-x Cd x SnS4 nanocrystals with changing Zn/Cd ratio. Such bandgap engineering in Cu2Zn1-x Cd x SnS4 helps in effective carrier separation at interface. Ultrafast spectroscopy reveals a longer lifetime and efficient separation of photoexcited charge carriers in Cu2CdSnS4 (CCTS) nanocrystals compared to that of CZTS. We found that there exists a type-II staggered band alignment at the CZTS (CCTS)/CdS interface, from cyclic voltammetric (CV) measurements, corroborated by first-principles density functional theory (DFT) calculations, predicting smaller conduction band offset (CBO) at the CCTS/CdS interface as compared to the CZTS/CdS interface. These results point toward efficient separation of photoexcited carriers across the p-n junction in the ultrafast time scale and highlight a route to improve device performances.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article