Separate absorption and multiplication solar-blind photodiodes based on p-NiO/MgO/n-ZnO heterostructure.
Nanotechnology
; 32(1): 015503, 2021 Jan 01.
Article
em En
| MEDLINE
| ID: mdl-32947275
ABSTRACT
High-performance solar-blind separate absorption and multiplication avalanche photodiodes (SAM-APDs) were fabricated based on a p-NiO/MgO/n-ZnO dual heterojunction structure. The prepared SAM-APDs exhibited a separated absorption and multiplication structure that used NiO and ZnO as absorption layers, and ultrawide-bandgap MgO as a multiplication layer. When the reverse-bias voltage exceeded 6 V, carrier avalanche multiplication occurred, and the avalanche gain reached a high value of 2.7 × 103, corresponding to a 1120% quantum efficiency, at a reverse-bias voltage of 10 V. These solar-blind SAM-APDs had an ultraviolet (UV) (310 nm)/visible (500 nm) rejection ratio as high as 563.6 at a 2 V reverse-bias voltage. These features render the SAM-APDs highly suitable for practical applications as UV solar-blind photodetectors.
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MEDLINE
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En
Ano de publicação:
2021
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Article