Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir.

Franz, Mathias; Junghans, Romy; Schmitt, Paul; Szeghalmi, Adriana; Schulz, Stefan E.

Afiliação

Franz M; Nano Device Technologies, Fraunhofer Institute for Electronic Nano Systems ENAS, Technologie-Campus 3, 09126 Chemnitz, Germany.
Junghans R; Nano Device Technologies, Fraunhofer Institute for Electronic Nano Systems ENAS, Technologie-Campus 3, 09126 Chemnitz, Germany.
Schmitt P; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Center of Excellence in Photonics, Albert-Einstein-Straße 7, 07745 Jena, Germany.
Szeghalmi A; Institute of Applied Physics, Friedrich-Schiller-University Jena, Albert-Einstein-Straße 15, 07745 Jena, Germany.
Schulz SE; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Center of Excellence in Photonics, Albert-Einstein-Straße 7, 07745 Jena, Germany.

Beilstein J Nanotechnol ; 11: 1439-1449, 2020.

Article em En | MEDLINE | ID: mdl-33029473