Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy.

Ruhstorfer, Daniel; Lang, Armin; Matich, Sonja; Döblinger, Markus; Riedl, Hubert; Finley, Jonathan J; Koblmüller, Gregor.

Afiliação

Ruhstorfer D; Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany.
Lang A; Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany.
Matich S; Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany.
Döblinger M; Department of Chemistry, Ludwig-Maximilians-University Munich, Munich, Germany.
Riedl H; Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany.
Finley JJ; Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany.
Koblmüller G; Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany.

Nanotechnology ; 32(13): 135604, 2021 Mar 26.

Article em En | MEDLINE | ID: mdl-33238260

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article