High-<i>k</i>erbium oxide film prepared by sol-gel method for low-voltage thin-film transistor.

High-kerbium oxide film prepared by sol-gel method for low-voltage thin-film transistor.

Wang, Guandong; Liu, Daiming; Fan, Shuangqing; Li, Zhaoyang; Su, Jie.

Afiliação

Wang G; College of Physics Science, Qingdao University, Qingdao 266071, People's Republic of China.
Liu D; College of Electromechanical Engineering, Qingdao University of Science & Technology, Qingdao 266061, People's Republic of China.
Fan S; College of Electronic and Information Engineering, Qingdao University, Qingdao 266071, People's Republic of China.
Li Z; College of Electronic and Information Engineering, Qingdao University, Qingdao 266071, People's Republic of China.
Su J; College of Physics Science, Qingdao University, Qingdao 266071, People's Republic of China.

Nanotechnology ; 32(21)2021 Mar 03.

Article em En | MEDLINE | ID: mdl-33556929