Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon.

Almadhoun, Mahmoud N; Speckbacher, Maximilian; Olsen, Brian C; Luber, Erik J; Sayed, Sayed Youssef; Tornow, Marc; Buriak, Jillian M.

Afiliação

Almadhoun MN; Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada.
Speckbacher M; Molecular Electronics, Department of Electrical and Computer Engineering, Technical University of Munich, 80333 Munich, Germany.
Olsen BC; Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada.
Luber EJ; Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada.
Sayed SY; Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta T6G 2G2, Canada.
Tornow M; Molecular Electronics, Department of Electrical and Computer Engineering, Technical University of Munich, 80333 Munich, Germany.
Buriak JM; Center for NanoScience (CeNS), Ludwig-Maximilians-University, 80539 Munich, Germany.

Nano Lett ; 21(6): 2666-2674, 2021 Mar 24.

Article em En | MEDLINE | ID: mdl-33689381