Negative Bias Instability of InZnO-Based Thin-Film Transistors Under Illumination Stress.

Lee, Sangmin; Choi, Pyungho; Song, Minjun; Lee, Gaeun; Lee, Nara; Jeon, Bohyeon; Choi, Byoungdeog.

Afiliação

Lee S; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Gyeonggi 16419, Republic of Korea.
Choi P; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Gyeonggi 16419, Republic of Korea.
Song M; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Gyeonggi 16419, Republic of Korea.
Lee G; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Gyeonggi 16419, Republic of Korea.
Lee N; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Gyeonggi 16419, Republic of Korea.
Jeon B; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Gyeonggi 16419, Republic of Korea.
Choi B; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Gyeonggi 16419, Republic of Korea.

J Nanosci Nanotechnol ; 21(8): 4277-4284, 2021 Aug 01.

Article em En | MEDLINE | ID: mdl-33714314

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article