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Vortex Domain Walls in Ferroelectrics.
Hong, Zijian; Das, Sujit; Nelson, Christopher; Yadav, Ajay; Wu, Yongjun; Junquera, Javier; Chen, Long-Qing; Martin, Lane W; Ramesh, Ramamoorthy.
Afiliação
  • Hong Z; Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China.
  • Das S; Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311200, China.
  • Nelson C; Cyrus Tang Center for Sensor Materials and Applications, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China.
  • Yadav A; Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States.
  • Wu Y; Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831-6071, United States.
  • Junquera J; Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States.
  • Chen LQ; Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China.
  • Martin LW; Cyrus Tang Center for Sensor Materials and Applications, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China.
  • Ramesh R; Departamento de Ciencias de la Tierra y Física de la Materia Condensada, Universidad de Cantabria, Cantabria Campus Internacional, Avenidad de los Castros s/n, E-39005 Santander, Spain.
Nano Lett ; 21(8): 3533-3539, 2021 Apr 28.
Article em En | MEDLINE | ID: mdl-33872021
ABSTRACT
Controlling the domain formation in ferroelectric materials at the nanoscale is a fertile ground to explore emergent phenomena and their technological prospects. For example, charged ferroelectric domain walls in BiFeO3 and ErMnO3 exhibit significantly enhanced conductivity which could serve as the foundation for next-generation circuits (Estévez and Laurson, Phys. Rev. B 2015, 91, 054407). Here, we describe a concept in which polar vortices perform the same role as a ferroelectric domain wall in classical domain structures with the key difference being that the polar vortices can accommodate charged (i.e., head-to-head and tail-to-tail) domains, for example, in ferroelectric PbTiO3/dielectric SrTiO3 superlattices. Such a vortex domain wall structure can be manipulated in a reversible fashion under an external applied field.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article