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Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes.
Wendel, Philipp; Dietz, Dominik; Deuermeier, Jonas; Klein, Andreas.
Afiliação
  • Wendel P; Institute of Materials Science, Technical University of Darmstadt, 64287 Darmstadt, Germany.
  • Dietz D; Institute of Materials Science, Technical University of Darmstadt, 64287 Darmstadt, Germany.
  • Deuermeier J; i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Campus de Caparica, Universidade NOVA de Lisboa and CEMOP/UNINOVA, 2829-516 Caparica, Portugal.
  • Klein A; Institute of Materials Science, Technical University of Darmstadt, 64287 Darmstadt, Germany.
Materials (Basel) ; 14(10)2021 May 20.
Article em En | MEDLINE | ID: mdl-34065310
The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article