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Reconfigurable MoS2 Memtransistors for Continuous Learning in Spiking Neural Networks.
Yuan, Jiangtan; Liu, Stephanie E; Shylendra, Ahish; Gaviria Rojas, William A; Guo, Silu; Bergeron, Hadallia; Li, Shaowei; Lee, Hong-Sub; Nasrin, Shamma; Sangwan, Vinod K; Trivedi, Amit Ranjan; Hersam, Mark C.
Afiliação
  • Yuan J; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Liu SE; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Shylendra A; Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, United States.
  • Gaviria Rojas WA; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Guo S; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Bergeron H; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Li S; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Lee HS; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Nasrin S; Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, United States.
  • Sangwan VK; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Trivedi AR; Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, United States.
  • Hersam MC; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
Nano Lett ; 21(15): 6432-6440, 2021 08 11.
Article em En | MEDLINE | ID: mdl-34283622
ABSTRACT
Artificial intelligence and machine learning are growing computing paradigms, but current algorithms incur undesirable energy costs on conventional hardware platforms, thus motivating the exploration of more efficient neuromorphic architectures. Toward this end, we introduce here a memtransistor with gate-tunable dynamic learning behavior. By fabricating memtransistors from monolayer MoS2 grown on sapphire, the relative importance of the vertical field effect from the gate is enhanced, thereby heightening reconfigurability of the device response. Inspired by biological systems, gate pulses are used to modulate potentiation and depression, resulting in diverse learning curves and simplified spike-timing-dependent plasticity that facilitate unsupervised learning in simulated spiking neural networks. This capability also enables continuous learning, which is a previously underexplored cognitive concept in neuromorphic computing. Overall, this work demonstrates that the reconfigurability of memtransistors provides unique hardware accelerator opportunities for energy efficient artificial intelligence and machine learning.
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Texto completo: 1 Base de dados: MEDLINE Assunto principal: Inteligência Artificial / Molibdênio Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Inteligência Artificial / Molibdênio Idioma: En Ano de publicação: 2021 Tipo de documento: Article