Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfO<i><sub>x</sub></i>-based metal-ferroelectric-insulator-semiconductor stack.

Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfO_x-based metal-ferroelectric-insulator-semiconductor stack.

Min, Kyung Kyu; Yu, Junsu; Kim, Yeonwoo; Lee, Jong-Ho; Kwon, Daewoong; Park, Byung-Gook.

Afiliação

Min KK; Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Republic of Korea.
Yu J; SK Hynix Inc., Icheon 17336, Republic of Korea.
Kim Y; Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Republic of Korea.
Lee JH; Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Republic of Korea.
Kwon D; Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Republic of Korea.
Park BG; Departmentof Electronic Engineering, Inha University, Incheon 22212, Republic of Korea.

Nanotechnology ; 32(49)2021 Sep 16.

Article em En | MEDLINE | ID: mdl-34404031