Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting.
iScience
; 24(8): 102921, 2021 Aug 20.
Article
em En
| MEDLINE
| ID: mdl-34430811
ABSTRACT
Silicon (Si) has been widely investigated as a feasible material for photoelectrochemical (PEC) water splitting. Compared to thick wafer-based Si, thin Si (<50 µm thickness) could concurrently minimize the material usage allowing the development of cost-effective and flexible photoelectrodes for integrable PEC cells. This work presents the design and fabrication of thin Si using crack-assisted layer exfoliation method through detailed optical simulations and a systematic investigation of the exfoliation method. Thin free-standing Si photoanodes with sub-50 µm thickness are demonstrated by incorporating a nickel oxide (NiOx) thin film as oxygen evolution catalyst, light-trapping surface structure, and a rear-pn+ junction, to generate a photo-current density of 23.43 mA/cm2 with an onset potential of 1.2 V (vs. RHE). Our work offers a general approach for the development of efficient and cost-effective photoelectrodes with Si films with important implications for flexible and wearable Si-based photovoltaics and (opto)electronic devices.
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MEDLINE
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En
Ano de publicação:
2021
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Article