Mapping the nanoscale effects of charge traps on electrical transport in grain structures of indium tin oxide thin films.

Jeon, Hyesong; Kim, Jeongsu; Shekhar, Shashank; Park, Jeehye; Hong, Seunghun.

Afiliação

Jeon H; Department of Materials Science and Engineering, Seoul National University Seoul 08826 Korea.
Kim J; Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University Seoul 08826 Korea seunghun@snu.ac.kr.
Shekhar S; Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University Seoul 08826 Korea seunghun@snu.ac.kr.
Park J; Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University Seoul 08826 Korea seunghun@snu.ac.kr.
Hong S; Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University Seoul 08826 Korea seunghun@snu.ac.kr.

Nanoscale Adv ; 3(17): 5008-5015, 2021 Aug 25.

Article em En | MEDLINE | ID: mdl-34485820

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article