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An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency.
Jia, Hujun; Wang, Xiaowei; Dong, Mengyu; Zhu, Shunwei; Yang, Yintang.
Afiliação
  • Jia H; School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Wang X; School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Dong M; School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Zhu S; School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Yang Y; School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines (Basel) ; 12(9)2021 Aug 28.
Article em En | MEDLINE | ID: mdl-34577679
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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2021 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2021 Tipo de documento: Article