Robust Interlayer Exciton in WS<sub>2</sub>/MoSe<sub>2</sub> van der Waals Heterostructure under High Pressure.

Robust Interlayer Exciton in WS₂/MoSe₂ van der Waals Heterostructure under High Pressure.

Ma, Xiaoli; Fu, Shaohua; Ding, Jianwei; Liu, Meng; Bian, Ang; Hong, Fang; Sun, Jiatao; Zhang, Xiaoxian; Yu, Xiaohui; He, Dawei.

Afiliação

Ma X; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Fu S; Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
Ding J; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China.
Liu M; University of Chinese Academy of Sciences, Beijing 100049, China.
Bian A; School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China.
Hong F; Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
Sun J; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Zhang X; University of Chinese Academy of Sciences, Beijing 100049, China.
Yu X; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China.
He D; School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China.