Your browser doesn't support javascript.
loading
Improved thermoelectric performance of Bi-deficient BiCuSeO material doped with Nb, Y, and P.
Yusupov, Khabib; Inerbaev, Talgat; Råsander, Mikael; Pankratova, Daria; Concina, Isabella; Larsson, Andreas J; Vomiero, Alberto.
Afiliação
  • Yusupov K; Institute of Physics, Chemistry and Biology (IFM), Linkoping University, 583 30, Linkoping, Sweden.
  • Inerbaev T; Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk 630090, Russia.
  • Råsander M; L. N. Gumilyov Eurasian National University, Nur-Sultan 010008, Kazakhstan.
  • Pankratova D; Applied Physics, Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of Technology, 97 187 Luleå, Sweden.
  • Concina I; Experimental Physics, Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of Technology, 97 187 Luleå, Sweden.
  • Larsson AJ; Experimental Physics, Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of Technology, 97 187 Luleå, Sweden.
  • Vomiero A; Applied Physics, Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of Technology, 97 187 Luleå, Sweden.
iScience ; 24(10): 103145, 2021 Oct 22.
Article em En | MEDLINE | ID: mdl-34723162
ABSTRACT
Thermoelectric materials convert waste heat into electric energy. Oxyselenide-based material, specifically, p-type BiCuSeO, is one of the most promising materials for these applications. There are numerous approaches to improve the heat-to-electricity conversion performance. Usually, these approaches are applied individually, starting from the pure intrinsic material. Higher performance could, however, be reached by combining a few strategies simultaneously. In the current work, yttrium, niobium, and phosphorous substitutions on the bismuth sites in already bismuth-deficient Bi1-xCuSeO systems were investigated via density functional theory. The bismuth-deficient system was used as the reference system for further introduction of substitutional defects. The substitution with phosphorous showed a decrease of up to 40 meV (11%) in the energy gap between conduction and valence bands at the highest substitution concentration. Doping with niobium led to the system changing from a p-type to an n-type conductor, which provides a possible route to obtain n-type BiCuSeO systems.
Palavras-chave

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article