Impact of La Concentration on Ferroelectricity of La-Doped HfO<sub>2</sub> Epitaxial Thin Films.

Impact of La Concentration on Ferroelectricity of La-Doped HfO₂ Epitaxial Thin Films.

Song, Tingfeng; Tan, Huan; Bachelet, Romain; Saint-Girons, Guillaume; Fina, Ignasi; Sánchez, Florencio.

Afiliação

Song T; Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain.
Tan H; Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain.
Bachelet R; Univ. Lyon, Ecole Centrale de Lyon, INSA Lyon, CPE Lyon, CNRS, Institut des Nanotechnologies de Lyon - INL, UMR5270, Université Claude Bernard Lyon 1, 69134 Ecully, France.
Saint-Girons G; Univ. Lyon, Ecole Centrale de Lyon, INSA Lyon, CPE Lyon, CNRS, Institut des Nanotechnologies de Lyon - INL, UMR5270, Université Claude Bernard Lyon 1, 69134 Ecully, France.
Fina I; Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain.
Sánchez F; Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain.

ACS Appl Electron Mater ; 3(11): 4809-4816, 2021 Nov 23.

Article em En | MEDLINE | ID: mdl-34841249

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2021 Tipo de documento: Article