Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared.
Nanomaterials (Basel)
; 11(12)2021 Dec 13.
Article
em En
| MEDLINE
| ID: mdl-34947727
ABSTRACT
Engineering detection dynamics in nanoscale receivers that operate in the far infrared (frequencies in the range 0.1-10 THz) is a challenging task that, however, can open intriguing perspectives for targeted applications in quantum science, biomedicine, space science, tomography, security, process and quality control. Here, we exploited InAs nanowires (NWs) to engineer antenna-coupled THz photodetectors that operated as efficient bolometers or photo thermoelectric receivers at room temperature. We controlled the core detection mechanism by design, through the different architectures of an on-chip resonant antenna, or dynamically, by varying the NW carrier density through electrostatic gating. Noise equivalent powers as low as 670 pWHz-1/2 with 1 µs response time at 2.8 THz were reached.
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Base de dados:
MEDLINE
Tipo de estudo:
Diagnostic_studies
Idioma:
En
Ano de publicação:
2021
Tipo de documento:
Article