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Artificial Neurons and Synapses Based on Al/a-SiNxOy:H/P+-Si Device with Tunable Resistive Switching from Threshold to Memory.
Leng, Kangmin; Zhu, Xu; Ma, Zhongyuan; Yu, Xinyue; Xu, Jun; Xu, Ling; Li, Wei; Chen, Kunji.
Afiliação
  • Leng K; The School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
  • Zhu X; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Ma Z; Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing 210093, China.
  • Yu X; The School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
  • Xu J; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Xu L; Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing 210093, China.
  • Li W; The School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
  • Chen K; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Nanomaterials (Basel) ; 12(3)2022 Jan 18.
Article em En | MEDLINE | ID: mdl-35159656
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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2022 Tipo de documento: Article
Texto completo
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XML
PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2022 Tipo de documento: Article