Integration of Topological Insulator Josephson Junctions in Superconducting Qubit Circuits.

Schmitt, Tobias W; Connolly, Malcolm R; Schleenvoigt, Michael; Liu, Chenlu; Kennedy, Oscar; Chávez-Garcia, José M; Jalil, Abdur R; Bennemann, Benjamin; Trellenkamp, Stefan; Lentz, Florian; Neumann, Elmar; Lindström, Tobias; de Graaf, Sebastian E; Berenschot, Erwin; Tas, Niels; Mussler, Gregor; Petersson, Karl D; Grützmacher, Detlev; Schüffelgen, Peter

Schmitt, Tobias W; Connolly, Malcolm R; Schleenvoigt, Michael; Liu, Chenlu; Kennedy, Oscar; Chávez-Garcia, José M; Jalil, Abdur R; Bennemann, Benjamin; Trellenkamp, Stefan; Lentz, Florian; Neumann, Elmar; Lindström, Tobias; de Graaf, Sebastian E; Berenschot, Erwin; Tas, Niels; Mussler, Gregor; Petersson, Karl D; Grützmacher, Detlev; Schüffelgen, Peter.

Afiliação

Schmitt TW; Institute for Semiconductor Nanoelectronics, Peter Grünberg Institute 9, Forschungszentrum Jülich & Jülich-Aachen Research Alliance (JARA), Forschungszentrum Jülich and RWTH Aachen University, 52428 Jülich, Germany.
Connolly MR; JARA-Institute for Green IT, Peter Grünberg Institute 10, Forschungszentrum Jülich and RWTH Aachen University, 52062 Aachen, Germany.
Schleenvoigt M; Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom.
Liu C; London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, London WC1H 0AH, United Kingdom.
Kennedy O; Institute for Semiconductor Nanoelectronics, Peter Grünberg Institute 9, Forschungszentrum Jülich & Jülich-Aachen Research Alliance (JARA), Forschungszentrum Jülich and RWTH Aachen University, 52428 Jülich, Germany.
Chávez-Garcia JM; Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom.
Jalil AR; London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, London WC1H 0AH, United Kingdom.
Bennemann B; Microsoft Quantum Lab Copenhagen and Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark.
Trellenkamp S; Institute for Semiconductor Nanoelectronics, Peter Grünberg Institute 9, Forschungszentrum Jülich & Jülich-Aachen Research Alliance (JARA), Forschungszentrum Jülich and RWTH Aachen University, 52428 Jülich, Germany.
Lentz F; Institute for Semiconductor Nanoelectronics, Peter Grünberg Institute 9, Forschungszentrum Jülich & Jülich-Aachen Research Alliance (JARA), Forschungszentrum Jülich and RWTH Aachen University, 52428 Jülich, Germany.
Neumann E; Helmholtz Nano Facility, Forschungszentrum Jülich, 52428 Jülich, Germany.
Lindström T; Helmholtz Nano Facility, Forschungszentrum Jülich, 52428 Jülich, Germany.
de Graaf SE; Helmholtz Nano Facility, Forschungszentrum Jülich, 52428 Jülich, Germany.
Berenschot E; National Physical Laboratory, Teddington TW11 0LW, United Kingdom.
Tas N; National Physical Laboratory, Teddington TW11 0LW, United Kingdom.
Mussler G; MESA+ Institute, University of Twente, 7500AE Enschede, The Netherlands.
Petersson KD; MESA+ Institute, University of Twente, 7500AE Enschede, The Netherlands.
Grützmacher D; Institute for Semiconductor Nanoelectronics, Peter Grünberg Institute 9, Forschungszentrum Jülich & Jülich-Aachen Research Alliance (JARA), Forschungszentrum Jülich and RWTH Aachen University, 52428 Jülich, Germany.
Schüffelgen P; Microsoft Quantum Lab Copenhagen and Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark.