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Tailoring porous/filament silicon using the two-step Au-assisted chemical etching of p-type silicon for forming an ethanol electro-oxidation layer.
Volovlikova, Olga; Shilyaeva, Yulia; Silakov, Gennady; Fedorova, Yulia; Maniecki, Tomasz; Gavrilov, Sergey.
Afiliação
  • Volovlikova O; Institute of Advanced Materials and Technologies, National Research University of Electronic Technology (MIET), Moscow 124498, Russia.
  • Shilyaeva Y; Institute of Advanced Materials and Technologies, National Research University of Electronic Technology (MIET), Moscow 124498, Russia.
  • Silakov G; Institute of Advanced Materials and Technologies, National Research University of Electronic Technology (MIET), Moscow 124498, Russia.
  • Fedorova Y; Scientific-Manufacturing Complex 'Technological Centre', Moscow 124498, Russia.
  • Maniecki T; Institute of General and Ecological Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, Poland.
  • Gavrilov S; Institute of Advanced Materials and Technologies, National Research University of Electronic Technology (MIET), Moscow 124498, Russia.
Nanotechnology ; 33(23)2022 Mar 15.
Article em En | MEDLINE | ID: mdl-35289768
ABSTRACT
In this paper, we are reporting on the fabrication of a porous silicon/Au and silicon filament/Au using the two-step Au-assisted chemical etching of p-type Si with a specific resistivity of 0.01, 1, and 12 Ω·cm when varying the Au deposition times. The structure analysis results show that with an increasing Au deposition time of up to 7 min, the thickness of the porous Si layer increases for the same etching duration (60 min), and the morphology of the layer changes from porous to filamentary. This paper shows that the uniform macro-porous layers with a thickness of 125.5-171.2µm and a specific surface area of the mesopore sidewalls of 142.5-182 m2·g-1are formed on the Si with a specific resistivity of 0.01 Ω·cm. The gradient macro-porous layers with a thickness of 220-260µm and 210-290µm, the specific surface area of the mesopore sidewalls of 3.7-21.7 m2·g-1and 17-29 m2·g-1are formed on the silicon with a specific resistivity of 1 and 12 Ω·cm, respectively. The por-Si/Au has excellent low-temperature electro oxidation performance with ethanol, the activity of ethanol oxidation is mainly due to the synergistic effect of the Au nanoparticles and porous Si. The formation mechanism of the uniform and gradient macro-porous layers and ethanol electro-oxidation on the porous/filament silicon, decorated with Au nanoparticles, was established. The por-Si/Au structures with perpendicularly oriented pores, a high por-Si layer thickness, and a low mono-Si layer thickness (with a specific resistivity of 1 Ω·cm) are optimal for an effective ethanol electro-oxidation, which has been confirmed with chronoamperometry measurements.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article