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Synergistically Optimized Thermal Conductivity and Carrier Concentration in GeTe by Bi-Se Codoping.
Xu, Liang; Wu, Gang; Wang, Ruoyu; Yan, Zipeng; Cai, Jianfeng; Yang, Juanxuan; Wang, Xuemei; Luo, Jun; Tan, Xiaojian; Liu, Guoqiang; Jiang, Jun.
Afiliação
  • Xu L; School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China.
  • Wu G; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
  • Wang R; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
  • Yan Z; University of Chinese Academy of Science, Beijing 100049, China.
  • Cai J; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
  • Yang J; University of Chinese Academy of Science, Beijing 100049, China.
  • Wang X; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
  • Luo J; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
  • Tan X; University of Chinese Academy of Science, Beijing 100049, China.
  • Liu G; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
  • Jiang J; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
ACS Appl Mater Interfaces ; 14(12): 14359-14366, 2022 Mar 30.
Article em En | MEDLINE | ID: mdl-35297604
ABSTRACT
The GeTe compound has been revealed to be an outstanding thermoelectric compound, while its inherent high thermal conductivity restricts further improvement in its performance. Herein, we report a study on the synergistic optimization of the thermoelectric performance of GeTe by Bi-Se codoping. It is shown that the introduction of Bi decreases the carrier concentration and increases the structural parameter of the interaxial angle. With Se doping in the Te site, the lattice thermal conductivity is markedly reduced, while the carrier mobility is slightly influenced. Compared with the singly Se-doped GeTe, the Ge1-xBixTe1-ySey samples are more closed to a cubic phase, as indicated by the larger interaxial angle. On account of the reduction of carrier concentration and thermal conductivity, a ZTmax of 1.80 at 665 K and a high ZTave of 1.39 (400-800 K) are obtained in Ge0.94Bi0.06Te0.85Se0.15. This work reveals that the interaxial angle is vital to the performance optimization of rhombohedral GeTe.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article