Robust Electronic Structure of Manganite-Buffered Oxide Interfaces with Extreme Mobility Enhancement.

Li, Hang; Gan, Yulin; Husanu, Marius-Adrian; Dahm, Rasmus Tindal; Christensen, Dennis Valbjørn; Radovic, Milan; Sun, Jirong; Shi, Ming; Shen, Baogen; Pryds, Nini; Chen, Yunzhong

Li, Hang; Gan, Yulin; Husanu, Marius-Adrian; Dahm, Rasmus Tindal; Christensen, Dennis Valbjørn; Radovic, Milan; Sun, Jirong; Shi, Ming; Shen, Baogen; Pryds, Nini; Chen, Yunzhong.

Afiliação

Li H; Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
Gan Y; Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, PSI, Switzerland.
Husanu MA; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China.
Dahm RT; National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania.
Christensen DV; Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
Radovic M; Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
Sun J; Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, PSI, Switzerland.
Shi M; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China.
Shen B; Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, PSI, Switzerland.
Pryds N; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China.
Chen Y; Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.