Passivation efficacy study of Al2O3dielectric on self-catalyzed molecular beam epitaxially grown GaAs1-xSbxnanowires.

Passivation efficacy study of Al₂O₃dielectric on self-catalyzed molecular beam epitaxially grown GaAs_1-xSb_xnanowires.

Parakh, Mehul; Ramaswamy, Priyanka; Devkota, Shisir; Kuchoor, Hirandeep; Dawkins, Kendall; Iyer, Shanthi.

Afiliação

Parakh M; Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro NC, 27401, United States of Americ a.
Ramaswamy P; Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro NC, 27411, United States of America.
Devkota S; Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro NC, 27401, United States of Americ a.
Kuchoor H; Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro NC, 27401, United States of Americ a.
Dawkins K; Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro NC, 27401, United States of Americ a.
Iyer S; Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro NC, 27401, United States of Americ a.

Nanotechnology ; 33(31)2022 May 11.

Article em En | MEDLINE | ID: mdl-35468592