Engineering Relaxation-Paths of C-Exciton for Constructing Band Nesting Bypass in WS<sub>2</sub> Monolayer.

Engineering Relaxation-Paths of C-Exciton for Constructing Band Nesting Bypass in WS₂ Monolayer.

Feng, Jiying; Li, Yuanzheng; Li, Jixiu; Feng, Qiushi; Xin, Wei; Liu, Weizhen; Xu, Haiyang; Liu, Yichun.

Afiliação

Feng J; Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China.
Li Y; Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China.
Li J; Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China.
Feng Q; Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China.
Xin W; Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China.
Liu W; Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China.
Xu H; Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China.
Liu Y; Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China.

Nano Lett ; 22(9): 3699-3706, 2022 May 11.

Article em En | MEDLINE | ID: mdl-35481760